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Chapter 00 Metal-Oxide-Semiconductor Field-Effect Transistor?
1. MOSFETÀÇ µ¿ÀÛ ¿ø¸®
2. Metal-Oxide-Semiconductor Capacitor (MOSCAP)
3. Metal‐2Oxide‐iSemiconductor Field‐Effect Transistor (MOSFET) 
 
Chapter 01 Band Structure and Carrier Dynamics
1. Band Structure
1-1. Energy bands
1-2. Simple energy band diagram of semiconductors
1-3. Energy vs. wave vector (E-k) diagram of semiconductors
2. Carrier Dynamics
2-1. Carrier drift
2-2. Carrier mobility & conductivity
2-3. Velocity saturation
2-4. Carrier diffusion
2-5. Total current 
 
Chapter 02 Gate Stack Technology
1. Gate stack ±â¼ú ¹ßÀü
2. Gate stack ±â¼úÀÌ Á÷¸éÇÑ ÇÑ°è ¹× ÇØ°á ¹æ¾È
2-1. Gate stack ±â¼úÀÌ Á÷¸éÇÑ ÇÑ°è (Gate leakage current)
2-2. Quantum mechanical tunneling
2-3. »õ·Î¿î oxide ¹°ÁúÀ» ÀÌ¿ëÇÑ gate stack technology
2-4. »õ·Î¿î metal ¹°ÁúÀ» ÀÌ¿ëÇÑ gate stack technology
2-5. High-k/Metal Gate (HK/MG) °øÁ¤ ±â¼ú 
 
Chapter 03 Summary on sub‐100‐0nm Semiconductor Device Technology
1. 90nm ¹ÝµµÃ¼ ±â¼ú
1-1. 90nm ±¸ÇöÀ» À§ÇÑ ¹®Á¦Á¡
1-2 »ç¿ëµÈ ±â¼ú
2. 65nm ¹ÝµµÃ¼ ±â¼ú
2-1. 65nm ±¸ÇöÀ» À§ÇÑ ÀÌÀüÀÇ ¹®Á¦Á¡
2-2. »ç¿ëµÈ ±â¼ú
3. 45nm ¹ÝµµÃ¼ ±â¼ú
3-1. 45nm ±¸ÇöÀ» À§ÇÑ ÀÌÀüÀÇ ¹®Á¦Á¡
3-2. »ç¿ëµÈ ±â¼ú
3-3. 45nm and future
4. 32nm ¹ÝµµÃ¼ ±â¼ú
4-1. 32nm ±¸ÇöÀ» À§ÇÑ ÀÌÀüÀÇ ¹®Á¦Á¡
4-2. »ç¿ëµÈ ±â¼ú
5. 22nm ¹ÝµµÃ¼ ±â¼ú
5-1. 22nm ±¸ÇöÀ» À§ÇÑ ÀÌÀüÀÇ ¹®Á¦Á¡
5-2. »ç¿ëµÈ ±â¼ú
6. 14nm ¹ÝµµÃ¼ ±â¼ú
6-1. 14nm ±¸ÇöÀ» À§ÇÑ ÀÌÀüÀÇ ¹®Á¦Á¡
6-2. »ç¿ëµÈ ±â¼ú 
 
Chapter 04 Low Power Semiconductor Devices
1. Power density ¹®Á¦
2. Boltzmann tyranny
2-1. Subthreshold slope (SS)
2-2. Thermionic emission
2-3. ÇØ°á¹æ¾È
3. Steep switching device: Negative capacitance Field‐4Effect Transistor (NCFET)
3-1. Steep switching device using negative capacitance
3-2. Capacitance
3-3. Ferroelectric materials
3-4. Curie temperature
3-5. Negative state in polarization vs. electric field plot
3-6. Stabilization of negative capacitance in ferroelectric capacitor
3-7. Ferroelectric°ú dielectricÀÇ capacitance matching
3-8. Negative capacitance field-effect transistors (NCFETs) 


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