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ֽ CMOS ̷ CMOS

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ֽ CMOS (Complementary Metal Oxide Semiconductor) ݵü ַ м мȸ ʷ ؾ Ѵ. ֽš ̱ , ֽ ׷ ǵǰ Ǿ ¼ 翬 ̴. , б кл п 1 л ̿ ֽ CMOS ݵü Ұ ġ ̴. ڴ п ޾, ֽ ݵü (100nm CMOS ݵü ) ̷ ݵü (Ư, super steep switching ݵü ) Ұ å Ͽ. г к г п ڷ Ȱ ֵ Ͽ, л ̿ ߾ ν, Ҽå ֵ Ͽ. ƹɷ ѹα ݵü ̲ ̷ ݵü е鿡 ̳ ־ Ѵ.


Chapter 00 Metal-Oxide-Semiconductor Field-Effect Transistor?
1. MOSFET
2. Metal-Oxide-Semiconductor Capacitor (MOSCAP)
3. Metal‐2Oxide‐iSemiconductor Field‐Effect Transistor (MOSFET) 
 
Chapter 01 Band Structure and Carrier Dynamics
1. Band Structure
1-1. Energy bands
1-2. Simple energy band diagram of semiconductors
1-3. Energy vs. wave vector (E-k) diagram of semiconductors
2. Carrier Dynamics
2-1. Carrier drift
2-2. Carrier mobility & conductivity
2-3. Velocity saturation
2-4. Carrier diffusion
2-5. Total current 
 
Chapter 02 Gate Stack Technology
1. Gate stack
2. Gate stack Ѱ ذ
2-1. Gate stack Ѱ (Gate leakage current)
2-2. Quantum mechanical tunneling
2-3. ο oxide ̿ gate stack technology
2-4. ο metal ̿ gate stack technology
2-5. High-k/Metal Gate (HK/MG)  
 
Chapter 03 Summary on sub‐100‐0nm Semiconductor Device Technology
1. 90nm ݵü
1-1. 90nm
1-2
2. 65nm ݵü
2-1. 65nm
2-2.
3. 45nm ݵü
3-1. 45nm
3-2.
3-3. 45nm and future
4. 32nm ݵü
4-1. 32nm
4-2.
5. 22nm ݵü
5-1. 22nm
5-2.
6. 14nm ݵü
6-1. 14nm
6-2.  
 
Chapter 04 Low Power Semiconductor Devices
1. Power density
2. Boltzmann tyranny
2-1. Subthreshold slope (SS)
2-2. Thermionic emission
2-3. ذ
3. Steep switching device: Negative capacitance Field‐4Effect Transistor (NCFET)
3-1. Steep switching device using negative capacitance
3-2. Capacitance
3-3. Ferroelectric materials
3-4. Curie temperature
3-5. Negative state in polarization vs. electric field plot
3-6. Stabilization of negative capacitance in ferroelectric capacitor
3-7. Ferroelectric dielectric capacitance matching
3-8. Negative capacitance field-effect transistors (NCFETs) 


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